JPH02718U - - Google Patents

Info

Publication number
JPH02718U
JPH02718U JP1989050173U JP5017389U JPH02718U JP H02718 U JPH02718 U JP H02718U JP 1989050173 U JP1989050173 U JP 1989050173U JP 5017389 U JP5017389 U JP 5017389U JP H02718 U JPH02718 U JP H02718U
Authority
JP
Japan
Prior art keywords
electron beam
electromagnetic field
electrons
initial
beam direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1989050173U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0528753Y2 (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPH02718U publication Critical patent/JPH02718U/ja
Application granted granted Critical
Publication of JPH0528753Y2 publication Critical patent/JPH0528753Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
JP1989050173U 1981-06-02 1989-04-27 Expired - Lifetime JPH0528753Y2 (en])

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/269,170 US4445041A (en) 1981-06-02 1981-06-02 Electron beam blanker

Publications (2)

Publication Number Publication Date
JPH02718U true JPH02718U (en]) 1990-01-05
JPH0528753Y2 JPH0528753Y2 (en]) 1993-07-23

Family

ID=23026103

Family Applications (2)

Application Number Title Priority Date Filing Date
JP57094663A Granted JPS58127A (ja) 1981-06-02 1982-06-02 電子ビ−ムブランキング装置
JP1989050173U Expired - Lifetime JPH0528753Y2 (en]) 1981-06-02 1989-04-27

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP57094663A Granted JPS58127A (ja) 1981-06-02 1982-06-02 電子ビ−ムブランキング装置

Country Status (4)

Country Link
US (1) US4445041A (en])
JP (2) JPS58127A (en])
DE (1) DE3219573C2 (en])
GB (1) GB2099626B (en])

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514896A (en) * 1981-03-25 1985-05-07 At&T Bell Laboratories Method of forming current confinement channels in semiconductor devices
GB2139411B (en) * 1983-05-05 1987-01-07 Cambridge Instr Ltd Charged particle deflection
JPS60112236A (ja) * 1983-11-21 1985-06-18 Hitachi Ltd パルスビ−ム発生装置
DE8336881U1 (de) 1983-12-22 1984-07-26 Rose, Harald, Prof.-Dr., 6100 Darmstadt Korpuskularstrahl-austastvorrichtung
JPS6132422A (ja) * 1984-07-24 1986-02-15 Hitachi Ltd 電子線描画装置
JPS6251218A (ja) * 1985-08-30 1987-03-05 Hitachi Ltd 電子線描画装置
GB2196175B (en) * 1986-10-03 1990-10-17 Trialsite Ltd Production of pulsed electron beams
US4922196A (en) * 1988-09-02 1990-05-01 Amray, Inc. Beam-blanking apparatus for stroboscopic electron beam instruments
DE3933569A1 (de) * 1989-10-07 1991-04-18 Messer Griesheim Gmbh Verwendung eines im zwischenfokusbereich zwischen zwei linsen angeordneten ablenksystemes
DE3938221A1 (de) * 1989-11-17 1991-05-23 Messer Griesheim Gmbh Verfahren zum schutz einer blende beim erzeugen von elektronenstrahlimpulsen
US5276330A (en) * 1991-05-29 1994-01-04 Etec Systems, Inc. High accuracy beam blanker
US5412218A (en) 1993-02-26 1995-05-02 Etec Systems, Inc. Differential virtual ground beam blanker
US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
US5747814A (en) * 1996-12-06 1998-05-05 International Business Machines Corporation Method for centering a lens in a charged-particle system
US6278124B1 (en) 1998-03-05 2001-08-21 Dupont Photomasks, Inc Electron beam blanking method and system for electron beam lithographic processing
US6521896B1 (en) * 2000-06-01 2003-02-18 Applied Materials, Inc. Blanker assembly employing dielectric material
US6617779B1 (en) 2001-10-04 2003-09-09 Samuel A. Schwartz Multi-bend cathode ray tube
US7009032B2 (en) 2002-12-20 2006-03-07 Ppg Industries Ohio, Inc. Sulfide-containing polythiols
GB2414857B (en) * 2004-06-03 2009-02-25 Nanobeam Ltd Apparatus for blanking a charged particle beam
US20090280329A1 (en) 2004-09-01 2009-11-12 Ppg Industries Ohio, Inc. Polyurethanes, Articles and Coatings Prepared Therefrom and Methods of Making the Same
US9464169B2 (en) 2004-09-01 2016-10-11 Ppg Industries Ohio, Inc. Polyurethanes, articles and coatings prepared therefrom and methods of making the same
ES2447035T3 (es) 2006-05-05 2014-03-11 Prc-Desoto International, Inc. Formulaciones de sellantes y encapsulantes eléctricos que comprenden politioles oligoméricos con funcionalidad tioéter
US8569712B2 (en) 2010-10-07 2013-10-29 Fei Company Beam blanker for interrupting a beam of charged particles
NL2008174C2 (en) * 2012-01-24 2013-08-21 Mapper Lithography Ip Bv Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device.
EP3133633B1 (en) * 2016-02-24 2018-03-28 FEI Company Studying dynamic specimen behavior in a charged-particle microscope

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR791255A (fr) * 1934-06-13 1935-12-06 Fernseh Ag Procédé pour améliorer le rendement en rayon des tubes de braun
BE634510A (en]) * 1962-07-05
US3374386A (en) * 1964-11-02 1968-03-19 Field Emission Corp Field emission cathode having tungsten miller indices 100 plane coated with zirconium, hafnium or magnesium on oxygen binder
NL6807439A (en]) * 1968-05-27 1969-12-01
JPS5251871A (en) * 1975-10-23 1977-04-26 Rikagaku Kenkyusho Projecting method for charge particle beams
GB1557924A (en) * 1976-02-05 1979-12-19 Western Electric Co Irradiation apparatus and methods
GB1544222A (en) * 1976-07-02 1979-04-19 Zeiss Jena Veb Carl Method of and apparatus for non-thermal electron beam processing of workpieces
JPS5322357A (en) * 1976-08-13 1978-03-01 Jeol Ltd Beam blanking unit
DE2705417A1 (de) * 1977-02-09 1978-08-10 Siemens Ag Anordnung zum ein- und austasten des elektronenstrahls eines elektronenmikroskops
CA1100237A (en) * 1977-03-23 1981-04-28 Roger F.W. Pease Multiple electron beam exposure system
DE2743200A1 (de) * 1977-09-26 1979-04-05 Siemens Ag Verbesserung an einer vorrichtung zur elektronenstrahleintastung
JPS5953657B2 (ja) * 1978-09-30 1984-12-26 超エル・エス・アイ技術研究組合 電子線装置
JPS5562730A (en) * 1978-11-02 1980-05-12 Toshiba Corp Electron beam exposure device
JPS5691423A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Electron beam exposure device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HEWLETT PACKARD JOURNAL=1981 *

Also Published As

Publication number Publication date
JPH0528753Y2 (en]) 1993-07-23
JPS58127A (ja) 1983-01-05
DE3219573C2 (de) 1986-12-11
DE3219573A1 (de) 1983-03-10
JPS6234132B2 (en]) 1987-07-24
GB2099626B (en) 1985-11-27
GB2099626A (en) 1982-12-08
US4445041A (en) 1984-04-24

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